This document is the datasheet of Infineon's MOSFET device. This device has high current output capability and supports high voltage low voltage applications. It can be applied to power supplies, switching power supplies and other scenarios.
The SPSO3N60C3 is a high‑voltage, low‑gate‑charge MOSFET designed for demanding power applications. This datasheet provides the device’s maximum ratings, electrical parameters, and thermal performance data.
Key sections include maximum ratings, thermal characteristics, detailed electrical characteristics, typical transient thermal behavior, and switching performance. The document also lists the package ordering code (PG‑TO251‑3‑1) and legal disclaimer information.
| Continuous drain current (Id) at 25 °C | 3.2 A |
|---|---|
| Pulsed drain current (Id,pulse) | 9.6 A |
The device can conduct a continuous drain current of 3.2 A at 25 °C.