This datasheet provides the parameters of IPP50R299CP, including the maximum voltage, maximum current, minimum current, maximum power, maximum temperature, etc.
The IPP50R299CP is a CoolMOS power transistor designed for hard‑ and soft‑switching SMPS topologies, including notebook adapters, PDP and LCD TV applications. It features ultra‑low gate charge, low on‑resistance, and high peak current capability while complying with RoHS.
The document lists maximum ratings, thermal characteristics, static and dynamic electrical parameters, gate‑charge data, and mechanical outlines. Key specifications such as continuous drain current, power dissipation, and avalanche energy are provided for design and reliability assessment.
| Continuous drain current (I_D) | 12 A |
|---|---|
| Pulsed drain current (I_D,pulse) | 26 A |
| Power dissipation (P_R) | 104 W |
| Gate charge (Q_g) | 23 nC |
| Input capacitance (C_iss) | 1190 pF |
| Output capacitance (C_oss) | 53 pF |
The maximum continuous drain current is 12 A at 25 °C.
The device can dissipate up to 104 W at 25 °C.
The gate charge is 23 nC.