This document describes the features and characteristics of the BAS116 silicon low leakage diode. It is suitable for low-leakage applications and medium speed switching times. It has a reverse voltage of 80V and a forward current of 250mA. Additionally, the diode has low reverse current and fast reverse recovery time.
This datasheet describes the Infineon BAS116 silicon low‑leakage diode. It lists maximum ratings such as reverse voltage, forward current, power dissipation and thermal resistance, and gives detailed electrical characteristics including breakdown voltage, reverse current, forward voltage at various currents, capacitance and reverse‑recovery time.
Package information for the SOT‑23 case, marking layout, standard reel packing, and legal disclaimer regarding warranty and usage in life‑support devices are also included.
| Reverse voltage (V_R) | 80 V |
|---|---|
| Peak reverse voltage (V_RM) | 85 V |
| Forward current (I_F) | 250 mA |
| Total power dissipation (P_D) | 370 mW |
| Junction temperature (T_J) | 150 °C |
| Storage temperature range | -65 °C to 150 °C |
| Diode capacitance | 2 pF |
The diode is rated for a continuous forward current of 250 mA.
It can be stored from –65 °C up to 150 °C.