The IPW60R125CP is a CoolMOSTM power transistor that features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, and Pb-free lead plating and RoHS compliance. CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom
The IPW60R125CP is a CoolMOS™ power transistor designed for hard‑switching topologies in server and telecom applications. It offers a low figure‑of‑merit, ultra‑low gate charge, and high peak current capability while meeting JEDEC qualification and RoHS compliance.
The datasheet lists maximum ratings, thermal and electrical characteristics, dynamic behavior, and typical performance curves. Key parameters include continuous and pulsed drain currents, on‑state resistance, gate charge, avalanche energy, and operating temperature range, enabling designers to evaluate suitability for high‑speed, high‑voltage switching circuits.
| Continuous drain current (Id) | 25 A |
|---|---|
| Pulsed drain current (Id,pulse) | 82 A |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Gate threshold voltage (Vgs(th)) | 3.5 V |
| On‑state resistance (Rds(on)) | 0.11 Ω typ |
| Total gate charge (Qg) | 53 nC |
| Avalanche energy (single pulse) | 708 mJ |
| Power dissipation (Pd) at 25 °C | 208 W |
| Operating temperature range | -55 °C to 150 °C |
| Thermal resistance, junction‑to‑case (Rjc) | 0.6 K/W |
The maximum continuous drain current is 25 A at 25 °C.
The typical on‑state resistance is 0.11 Ω at Vgs = 10 V and Id = 16 A.
The total gate charge is 53 nC from 0 V to 10 V.
Junction‑to‑case thermal resistance is 0.6 K/W and junction‑to‑ambient is 0.62 K/W.