SPP08P06P SIPMOS Power-Transistor, features P-Channel, Enhancement mode, Avalanche rated, dv/dt rated, operating temperature 175°C
The SPP08P06P is a P‑channel SIPMOS power transistor offered by Infineon Technologies. The document presents its key features, maximum ratings, and typical characteristics for designers.
Detailed sections cover thermal resistance, electrical parameters such as drain‑source voltage, continuous drain current, on‑state resistance, gate charge, and avalanche energy, as well as typical output and transfer characteristics. The datasheet also includes legal notices and contact information for Infineon.
| Drain‑source breakdown voltage (Vds) | -60 V |
|---|---|
| Continuous drain current (Id) | -8.8 A |
| Power dissipation (Ptot) | 42 W |
| On‑state resistance (Rds(on)) typical | 0.23 Ω |
| Gate threshold voltage (Vgs(th)) typical | -2.1 V |
The maximum continuous drain current is -8.8 A at 25 °C.
The device is rated for a drain‑source breakdown voltage of 60 V.
The specified operating and storage temperature range is –55 °C to 175 °C.