SDT12S60 is the world's first 600V Schottky diode, using revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on switching behavior, no forward recovery
The SDT12S60 is a silicon carbide Schottky diode rated for 600 V with a continuous forward current of 12 A and a low forward voltage drop. It features no reverse recovery charge and stable performance over a wide temperature range, making it suitable for high‑efficiency power conversion.
The datasheet lists detailed electrical parameters (forward voltage, reverse current, capacitance), thermal characteristics (junction‑case and junction‑ambient resistance), power dissipation limits, and mechanical dimensions of the TO‑220‑2‑2 package. It also includes typical forward and reverse characteristic curves and transient thermal impedance data for design reference.
| Continuous forward current (If) | 12 A |
|---|---|
| RMS forward current (If RMS) | 17 A |
| Surge non‑repetitive forward current (If(surge)) | 36 A |
| Repetitive peak forward current (If(peak)) | 49 A |
| Non‑repetitive peak forward current (If(max)) | 120 A |
| Repetitive peak reverse voltage (Vr) | 600 V |
| Surge peak reverse voltage (Vr(surge)) | 600 V |
| Power dissipation at 25 °C (Pd) | 88.2 W |
| Operating temperature range | -55 °C to +175 °C |
| Junction‑to‑case thermal resistance (RθJC) | 1.7 K/W |
| Junction‑to‑ambient thermal resistance (RθJA) | 62 K/W |
| Forward voltage at 12 A, 25 °C | 1.5–1.7 V |
| Forward voltage at 12 A, 150 °C | 1.7–2.1 V |
| Reverse current at 600 V, 25 °C | 40 µA |
| Reverse current at 600 V, 150 °C | 100–2000 µA |
| Total capacitance at 1 V, 1 MHz | 450 pF |
| Package dimensions (A) length | 9.70–10.10 mm |
The diode can carry a continuous forward current of 12 A at 100 °C.
It is rated for a repetitive peak reverse voltage of 600 V.
The maximum power dissipation at 25 °C is 88.2 W.
Junction‑to‑case thermal resistance is 1.7 K/W and junction‑to‑ambient is 62 K/W.