16M x 8 Bit NAND Flash Memory datasheet from Samsung
The K9F2808U0A is a 16 M × 8‑bit NAND flash memory offering 528‑byte pages and 16 KB + 512‑byte blocks. It supports automatic program/erase, 100 K program/erase cycles, and 10‑year data retention, making it suitable for solid‑state storage in portable devices.
The datasheet details electrical ratings, timing diagrams, pin functions, package dimensions (48‑pin TSOP), and protection features such as hardware write‑protect and power‑transition safeguards. Recommended operating conditions and absolute maximum ratings are also provided.
| Supply Voltage (Vcc) | 2.7 V ~ 3.6 V |
|---|---|
| Memory Organization | 16 M × 8 bit NAND flash (132 Mbit) |
| Page Size | 528 Byte |
| Block Size | 16 KB + 512 Byte |
| Program Time (typical) | 200 µs |
| Block Erase Time (typical) | 2 ms |
| Endurance | 100 K program/erase cycles |
| Data Retention | 10 Years |
| Package Type | 48‑pin TSOP |
| Operating Temperature Range | -40 °C ~ +125 °C |
The device operates from 2.7 V to 3.6 V.
A typical page program takes about 200 µs.
It is rated for 100 K program/erase cycles.
The chip is supplied in a 48‑pin TSOP package.