STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET is a new power MOSFET from STMicroelectronics. It has standard level gate drive, 100% avalanche tested, and is suitable for switching applications.
This datasheet provides the electrical ratings, characteristic curves and test circuits for the STD65NF06 (DPAK) and STP65NF06 (TO‑220) N‑channel power MOSFETs. It includes absolute maximum ratings, thermal data, on‑resistance, capacitances and diode recovery specifications.
Package information, mechanical dimensions and revision history are also listed, along with legal notices and the STMicroelectronics copyright statement.
| Drain‑source voltage (VDS) | 60 V |
|---|---|
| Gate‑source voltage (VGS) | +20 V |
| Continuous drain current (Id) at 25 °C | 60 A |
| Continuous drain current (Id) at 100 °C | 42 A |
| Pulsed drain current | 240 A |
| Total dissipation (PD) at 25 °C | 110 W |
| Thermal resistance junction‑case (RθJC) | 1.36 °C/W |
| Thermal resistance junction‑ambient (RθJA) | 62.5 °C/W |
The maximum continuous drain current is 60 A at a case temperature of 25 °C.
The MOSFETs are rated for a maximum drain‑source voltage of 60 V.