STP60NS04ZB N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET is the latest developed product of ST company. It has features of 100% avalanche tested, low capacitance and gate charge, 175℃ maximum junction temperature. This product is suitable for automotive and other harsh environments.
The STP60NS04ZB is a fully clamped N‑channel Power MOSFET featuring a 60 A continuous drain current at 25 °C, low gate charge, and a robust TO‑220 package. It is designed for harsh environments such as automotive applications and any use requiring extra ruggedness.
The datasheet details absolute maximum ratings, electrical characteristics, thermal data, and mechanical dimensions. It includes typical performance curves, package information, and revision history, helping designers evaluate suitability for switching and power conversion circuits.
| Continuous drain current (25 °C) | 60 A |
|---|---|
| Continuous drain current (100 °C) | 42 A |
| Total power dissipation (25 °C) | 150 W |
| Junction‑to‑case thermal resistance | 1 °C/W |
| Gate threshold voltage | 1.7 V – 4.2 V |
| Input capacitance | 1700 pF – 2100 pF |
| On‑state resistance (typical) | 10 mΩ – 14 mΩ |
| Package | TO‑220 |
| Operating temperature range | -65 °C to 175 °C |
The device can handle up to 60 A continuous drain current at 25 °C.
The MOSFET is rated for a total dissipation of 150 W at 25 °C.
It is supplied in a TO‑220 package.
The MOSFET can be stored and operated from –65 °C up to 175 °C.