This document describes the features and characteristics of the 2003 Mitsubishi HVIGBT module CM600E2Y-34H, including high power switching use insulated type G IC, maximum ratings for voltage and current, dimensions, etc.
The CM600E2Y-34H is a high‑voltage insulated‑gate bipolar transistor (HVIGBT) module designed for high‑power switching and dynamic braking applications such as DC choppers. It is an insulated‑type, single‑element pack intended for use in half‑bridge configurations.
The datasheet lists maximum ratings, detailed electrical characteristics, and performance curves, including collector‑emitter voltage, gate‑emitter voltage, current limits, switching times, thermal impedance, and gate charge data, enabling engineers to evaluate the module for high‑current, high‑voltage power conversion designs.
| Collector‑emitter voltage (VCE) | 1700 V |
|---|---|
| Junction temperature range (Tj) | -40 ~ +150 °C |
| Isolation voltage (Viso) | 4000 V |
| Main terminal mounting torque (M8) | 6.67 ~ 13.00 N·m |
| Storage temperature range | -40 ~ 4125 °C |
The isolation voltage rating is 4000 V.