CM800HA-34H is a high power switching insulated gate bipolar transistor module produced by Mitsubishi. Its rated collector-emitter voltage is 1700V and rated collector-emitter current is 800A.
This datasheet describes the Mitsubishi Electric CM800HA-34H high‑voltage insulated‑gate bipolar transistor (HVIGBT) module. It lists the module’s insulated type construction, typical dimensions, and outlines the circuit diagram for integration into inverters, converters, DC choppers, induction heating and DC‑to‑DC converters.
Key electrical ratings are presented, including maximum collector‑emitter voltage, continuous and pulse collector currents, power dissipation, thermal resistance, isolation voltage, and capacitance values. Performance curves illustrate output characteristics, gate‑emitter voltage behavior, and switching energy for both resistive and inductive loads.
| Maximum continuous collector current (Ic) | 800 A |
|---|---|
| Maximum pulse collector current | 1600 A |
| Junction temperature range (Tj) | -40 °C to +150 °C |
| Storage temperature range (Tstg) | -40 °C to +125 °C |
| Mass (typical) | 1.5 kg |
| Input capacitance (Cies) | 93 nF |
The module can handle a continuous collector current of 800 A.
The module can sustain a pulse collector current of 1600 A.
The typical mass is 1.5 kg.