This document introduces the Mitsubishi HVIGBT module CM1200DC-34N from July 2005. The module is used for high power switching applications and features an insulated type G IC with a current rating of 1200A and voltage rating of 1700V. It is a 2-element insulated type G module with an AISiC baseplate and trench gate IGBT: CSTBT™ with a soft reverse recovery diode. It is suitable for traction drives, high reliability converters/inverters, and DC choppers.
The Mitsubishi CM1200DC-34N is a 4th‑generation high‑voltage insulated gate bipolar transistor (HVIGBT) module designed for high‑power switching applications such as traction drives and converters. It features an insulated type construction with a two‑element pack and AISiC baseplate.
The datasheet provides maximum ratings, electrical and thermal characteristics, mechanical dimensions, and performance curves, enabling engineers to evaluate suitability for high‑current, high‑voltage systems.
| Collector‑emitter voltage (VCE) | 1700 V |
|---|---|
| Continuous collector current (Ic) | 1200 A |
| Junction temperature range | -40 °C to +150 °C |
| Storage temperature range | -40 °C to +125 °C |
| Thermal resistance (junction‑to‑case) | 19.0 K/kW |
| Mass | 0.8 kg |
The module is rated for a maximum collector‑emitter voltage of 1700 V.
The continuous collector current rating is 1200 A.
The junction‑to‑case thermal resistance is 19.0 K/kW.