This document describes the features and characteristics of the 2005 Mitsubishi HVIGBT module CM1200HC-34H. The module is designed for high power switching and uses an insulated type G IC with a rating of 1200A G VCES and 1700V G insulated type G. It features an AISiC baseplate and a soft reverse recovery diode. The module is suitable for traction drives, high reliability converters/inverters, and DC choppers applications.
The CM1200HC-34H is a 3rd‑generation high‑voltage insulated gate bipolar transistor (HVIGBT) module in an insulated type package. It is intended for high‑power switching use in traction drives, high‑reliability converters/inverters and DC choppers.
The datasheet lists maximum ratings such as 1700 V collector‑emitter voltage, 1200 A continuous collector current and 2400 A pulse current, with a maximum power dissipation of 10 400 W. Thermal characteristics include a junction‑to‑case resistance of 12.0 K/kW and a junction temperature range of –40 °C to +150 °C. Mechanical data give a mass of 1 kg and mounting dimensions, while performance curves illustrate voltage‑current behavior and switching energy.
| Collector‑emitter voltage (VCES) | 1700 V |
|---|---|
| Junction temperature range | –40 °C to +150 °C |
| Mass | 1.0 kg |
The module is rated for a maximum collector‑emitter voltage of 1700 V.
It is used in traction drives, high‑reliability converters/inverters and DC choppers.