CM1200HB-50H is a high voltage insulated gate bipolar transistor module manufactured by Mitsubishi. This module has a collector current of 1200A and a collector-emitter reverse voltage of 2500V. It is suitable for applications such as inverters, converters, DC choppers, induction heating and DC to DC converters.
The CM1200HB-50H is a high‑voltage insulated‑gate bipolar transistor (HVIGBT) module designed for high‑power switching uses such as inverters, converters, DC choppers, induction heating and DC‑to‑DC converters. It is an insulated‑type, single‑element pack with a compact outline drawing and circuit diagram.
The datasheet lists maximum ratings (2500 V collector‑emitter voltage, 1200 A continuous collector current, 2400 A pulse current), electrical characteristics, thermal data, and performance curves including saturation voltage, capacitance, and switching times. Mechanical data such as mounting torque, mass (22 kg), and temperature limits are also provided.
| Collector‑emitter voltage rating | 2500 V |
|---|---|
| Maximum collector dissipation | 15600 W |
| Isolation voltage | 6000 V |
| Typical mass | 22 kg |
| Junction temperature range | -40 °C to +150 °C |
| Storage temperature range | -40 °C to +125 °C |
The isolation voltage rating is 6000 V.
The module weighs approximately 22 kg.