M63850P/FP is a 4-channel N-channel DMOS transistor array with a rated drain-source voltage of 80V and a rated drain-source current of 1.5A.
The M63850P/FP is a 4‑unit DMOS transistor array designed for inverter input power applications such as driving relays, printers, LEDs and lamps. Each unit contains an independent N‑channel DMOS transistor with a shared COM and GND pin and built‑in clamping diodes for spike protection.
Key specifications include a maximum drain current of 1.5 A per circuit, a breakdown voltage of 80 V, low on‑state resistance (Ron ≈ 0.729 Ω at Id = 1.25 A), and an operating temperature range from –40 °C to +85 °C. Recommended supply voltage is 5 V with typical on‑supply current of 130 pA per circuit. The device is supplied in a 16‑pin package (16P4(P) or 16P2N(FP)).
| Breakdown voltage (VDS) | 80 V |
|---|---|
| Maximum drain current per circuit | 1.5 A |
| On‑state resistance (Ron) | 0.729 Ω @ 1.25 A |
| Operating temperature range | -40 °C to +85 °C |
Each DMOS transistor can handle up to 1.5 A of drain current.
The device is rated for a maximum drain‑source voltage of 80 V.
The on‑state resistance is approximately 0.729 Ω when Id = 1.25 A.