Mitsubishi Semiconductor M63828WP/DP Datasheet

M63828WP/DP are 7-unit 500mA Darlington transistor arrays with clamp diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.


Mitsubishi Semiconductor M63828WP/DP Datasheet - cover page
Brand
Mitsubishi
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
6
File format
PDF
File size
70 KB
Published
21 March, 2012
Updated
30 September, 2023
MD5 checksum
30617A596C5DA4C914C9E7A765621EE4

About this manual

The M63828WP/DP is a seven‑circuit Darlington transistor array built from NPN transistors. It provides high‑current driving up to 500 mA per circuit and includes integrated clamping diodes. The device operates over a wide temperature range (‑40 °C to +85 °C) and is suitable for driving relays, printers, LEDs, lamps and MOS‑bipolar logic interfaces.

Electrical specifications include a collector‑emitter breakdown voltage of up to 50 V, input voltage range of 0.5 V to 30 V, and power dissipation of 1.47 W (WP) or 1.00 W (DP). Two package options are offered: 16P4X‑A (WP) and 16P2X‑B (DP), both 16‑pin plastic molded packages with detailed mechanical dimensions provided.

What's inside

  • Description
  • Features
  • Application
  • Pin Configuration
  • Absolute Maximum Ratings
  • Recommended Operating Conditions
  • Electrical Characteristics
  • Switching Characteristics
  • Typical Characteristics
  • Package Outline

Specifications

Input voltage range (VI)0.5 V – 30 V
Clamping diode forward current (IF)500 mA
Operating temperature range‑40 °C to +85 °C
Package type16P4X‑A (WP) and 16P2X‑B (DP) 16‑pin plastic molded packages
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