The M63814P/FP/GP/KP is a 7-unit single transistor array with clamping diodes. The circuits are made of NPN transistors. The semiconductor integrated circuits per- form high-current driving with extremely low input-current supply.
The M63814 series from Mitsubishi Semiconductor consists of seven NPN transistor circuits with integrated clamping diodes. Each circuit can drive up to 300 mA and operates over a wide temperature range, making it suitable for driving LEDs and small‑signal lamps.
The datasheet provides detailed electrical characteristics, absolute maximum ratings, recommended operating conditions, and thermal derating curves for the four package variants (P, FP, GP, KP). It also includes pin configurations, switching times, and typical performance graphs.
| Collector‑emitter voltage (VCEO) | 0.5 ~ +35 V |
|---|---|
| Collector current per circuit (Ic) | 300 mA |
| Input voltage (VI) | 0.5 ~ +35 V |
| Clamping diode reverse voltage (VR) | 35 V |
| Power dissipation (Pd) – M63814P | 1.47 W |
| Operating temperature range | -40 °C to +85 °C |
| Breakdown voltage (BVcEo) | >35 V |
| Package configurations | P, FP, GP, KP |
The series can handle up to 35 V between collector and emitter.
Each circuit can output up to 300 mA collector current.
Four configurations are offered: P, FP, GP, and KP.
The device operates from –40 °C up to +85 °C.