M63816P/FP/KP is an 8-unit 300mA transistor array with clamp diode, made of NPN transistors. The semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
The M63816P/FP/KP is an eight‑circuit NPN transistor array with integrated clamping diodes, designed for high‑current driving of LEDs and other indication elements. Each circuit can handle up to 300 mA collector current and the device operates over a wide temperature range.
Key specifications include a breakdown voltage of 35 V, a synchronizing current of 300 mA, and package options such as 18P4G(P). The datasheet provides absolute maximum ratings, recommended operating conditions, electrical and switching characteristics, as well as thermal derating curves to aid designers in proper implementation.
| Package type | 18P4G(P) |
|---|---|
| Breakdown voltage (BVceo) | 35 V |
| Synchronizing current (Ic max) | 300 mA |
| Operating temperature range | -40 °C to +85 °C |
| Input voltage range | 0.5 – 35 V |
| Clamping diode forward current (IF) | 300 mA |
| Clamping diode reverse voltage (VR) | 35 V |
The device operates from –40 °C up to +85 °C.
Package options include 18P4G(P) as well as 20P2E‑A(KP) and 20P2N‑A(FP).
The breakdown voltage is specified as 35 V.