M63824GP/KP is a 7-channel NPN transistor array that integrates 7 high current gain driver pairs. This product has high breakdown voltage (BVCEO ≥ 50V), high current drive (IC(max) = 500mA), built-in clamp diode, 3V microcomputer series compatible input and wide operating temperature range (Ta = –40 to +85°C). This product can be applied to the output of 3V microcomputer series and the interface with high voltage system.
The M63824GP/KP is a 7‑channel Darlington transistor array designed for 3‑V micro‑computer series and high‑voltage interfacing. Each channel consists of a high‑gain NPN driver pair with a built‑in clamping diode for inductive‑load protection. The device operates over a wide temperature range (‑40 °C to +85 °C) and can drive up to 500 mA per channel.
The datasheet lists absolute maximum ratings, recommended operating conditions, and detailed electrical characteristics such as collector‑emitter breakdown voltage (0.5 V‑50 V), input voltage range (0.5 V‑10 V), and power dissipation (0.80 W for GP, 0.60 W for KP). Typical performance curves for duty‑cycle versus collector current and output saturation voltage are also provided.
| Collector‑emitter breakdown voltage (VCEO) | 0.5 V ~ 50 V |
|---|---|
| Collector current per circuit (Ic) | 500 mA |
| Input voltage (Vi) | 0.5 V ~ 10 V |
| Clamping diode forward current (IF) | 500 mA |
| Power dissipation (Pa) | 0.80 W (GP) / 0.60 W (KP) |
| Operating temperature range | ‑40 °C ~ +85 °C |
| Storage temperature range | ‑55 °C ~ +125 °C |
Each channel can handle up to 500 mA of collector current.
The device is rated for a collector‑emitter breakdown voltage between 0.5 V and 50 V.
The acceptable input voltage range is 0.5 V to 10 V.
It operates from –40 °C up to +85 °C.