MGF0951P is an N-channel schottky gate GaAs FET designed for use L/S band amplifiers. Its features are high output power, high power gain and high power added efficiency.
The MGF0951P is a high‑power GaAs field‑effect transistor designed for L/S‑band power amplifiers. It features an N‑channel Schottky gate and is supplied in an SMD plastic‑mold, non‑matched package.
Key specifications include a typical output power of 31 dBm at 2.15 GHz with 20 dBm input, a gain of 13 dB, and a power‑added efficiency of about 50 %. The device can handle a drain current of 800 mA and a total power dissipation of 6 W, with recommended bias conditions of Vds = 10 V, Ids = 200 mA, and a gate resistor of 500 Ω. Safety and handling notes are provided at the end of the document.
| Typical output power (Po) | 31 dBm |
|---|---|
| Typical gain (Gp) | 13 dB |
| Power‑added efficiency (nadd) | 50 % |
| Gate‑to‑source breakdown voltage (VGS0) | -15 V |
| Drain current (ID) | 800 mA |
| Total power dissipation (PT) | 6.0 W |
| Storage temperature range | -40 to +150 °C |
| Package type | SMD / Plastic Mold non‑matched |
| Recommended bias conditions | Vds=10 V, Ids=200 mA, Rg=500 Ω |
The typical output power is 31 dBm at 2.15 GHz with a 20 dBm input.
It provides a typical gain of 13 dB at 2.15 GHz.
Recommended bias is Vds = 10 V, Ids = 200 mA, and a gate resistor of 500 Ω.
The maximum drain current rating is 800 mA.