The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers.
The MGFO909A is a high‑power GaAs field‑effect transistor designed for L/S‑band power amplifiers. The datasheet provides a detailed outline drawing, electrical characteristics, and recommended bias settings for optimal performance.
Key information includes absolute maximum ratings, typical performance curves, and safety notices. The document also contains Mitsubishi Electric's legal disclaimer and export‑control statements.
| Output power (1 dB compression) | 38.0 dBm @ 2.3 GHz |
|---|---|
| Linear Power Gain (GLP) | 11.0 dB @ 2.3 GHz |
| Power added efficiency (PAE) | 45 % (typ.) @ 2.3 GHz, P1dB |
| Gate‑to‑source breakdown voltage (VGS0) | -15 V |
| Gate‑to‑drain breakdown voltage (VGD0) | -15 V |
| Drain current (ID) | 5 A |
| Reverse gate current (IGR) | -15 mA |
| Forward gate current (IGF) | 31.5 mA |
| Total power dissipation (PT) | 27.3 W |
| Channel temperature (Tch) | 175 °C |
| Storage temperature (Tstg) | -65 °C to +175 °C |
| Transconductance (gm) | 1.5 S (typ.) |
The MGFO909A delivers 38.0 dBm output power at 1 dB compression when biased at VDS = 10 V and IDS = 1.3 A at 2.3 GHz.