The MGF0921A is a high‑power GaAs FET with an N‑channel Schottky gate, intended for use in UHF band power amplifiers. It is supplied as an SMD non‑matched device for L&S band applications.
Key specifications include a typical output power of 33 dBm at 1.9 GHz, a gain of 17 dB, and a power‑added efficiency of 40 % under the recommended bias of VDS = 10 V and IDS = 500 mA. Absolute maximum ratings list a drain current of 1800 mA and a total power dissipation of 10 W. The document also contains safety and legal notices from Mitsubishi Electric Corporation.
| Typical Output Power | 33 dBm @ 1.9 GHz, Pin = 17 dBm |
|---|---|
| Typical Gain | 17 dB @ 1.9 GHz |
| Typical Power‑Added Efficiency | 40 % @ 1.9 GHz, Pin = 17 dBm |
| Gate‑to‑Source Breakdown Voltage | -15 V |
| Gate‑to‑Drain Breakdown Voltage | -15 V |
| Maximum Drain Current | 1800 mA |
| Total Power Dissipation | 10 W |
| Thermal Resistance (junction‑case) | 15 °C/W |
The typical output power is 33 dBm when driven with 17 dBm input at 1.9 GHz.
Recommended bias is VDS = 10 V, IDS = 500 mA, and a gate resistor of 200 Ω.
The device can handle up to 1800 mA of drain current.
It is intended for use in UHF band power amplifiers.