The MGF4951A/MGF4952A is a super-low noise HEMT (High Electron Mobility Transistor) designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
The MGF4951A and MGF4952A are super‑low‑noise InGaAs HEMT GaAs FETs offered in a lead‑less ceramic package. They are intended for use in C‑to‑K band low‑noise amplifiers, where minimal parasitic loss and high gain are required.
The datasheet lists absolute maximum ratings, typical electrical parameters such as a minimum noise figure of 0.40 dB (MGF4951A) and 0.60 dB (MGF4952A), recommended bias of VDS = 2 V and ID = 10 mA, and S‑parameter data across the frequency range. Safety and usage notes emphasize careful design to avoid breakdowns and ensure reliability.
| Minimum noise figure (MGF4951A) | 0.40 dB (Typ.) |
|---|---|
| Gate‑to‑drain breakdown voltage (VGDO) | -4 V |
| Drain current (ID) | 60 mA |
| Transconductance (gm) | 70 mS (typ.) |
The minimum noise figure of the MGF4951A is 0.40 dB (typ.).
The recommended bias conditions are VDS = 2 V and ID = 10 mA.
The absolute maximum drain current rating is 60 mA.
The gate‑to‑drain breakdown voltage must not exceed -4 V.