This document describes the high-power GaAs FET amplifier model MGF0911A. The product is designed for UHF band amplifiers and features high output power, high power gain, and high power added efficiency.
The MGF0911A is a high‑power GaAs FET with an N‑channel Schottky gate designed for UHF band amplifiers. The datasheet provides detailed electrical parameters, recommended bias conditions, and typical performance curves.
Safety and legal notices are included, emphasizing proper circuit design, export controls, and Mitsubishi Electric's disclaimer of liability for product use.
| Output power at 1 dB compression (P1dB) | 41.0 dBm (typ.) @ 2.3 GHz |
|---|---|
| Linear Power Gain (GLP) | 11.0 dB (typ.) @ 2.3 GHz |
| Power Added Efficiency (PAE) | 40 % (typ.) @ 2.3 GHz |
| Maximum drain current (ID) | 10 A |
| Gate‑to‑drain voltage (VGD) | -15 V |
| Gate‑to‑source voltage (VGS) | 215 V |
| Total power dissipation | 37.5 W |
| Storage temperature range | -65 °C to +175 °C |
The typical P1dB is 41.0 dBm at 2.3 GHz.
The device can handle up to 10 A of drain current.
The recommended drain‑source voltage is 10 V with a drain current of 2.6 A.
Typical PAE is 40 % at 2.3 GHz.