The MGF0910A is an N-channel schottky gate GaAs FET designed for use in UHF band amplifiers. It has high output power, high power gain, and high power added efficiency.
The MGF0910A is a high‑power GaAs FET with an N‑channel Schottky gate, intended for use in UHF‑band power amplifiers. The document lists its key features, recommended bias conditions, and safety guidelines for circuit designers.
Typical performance includes a maximum drain current of 5 A, gate‑to‑drain voltage rating of –15 V, and a typical power added efficiency of 45 % at 2.3 GHz. Detailed S‑parameter data and absolute maximum ratings are also provided.
| Maximum Drain Current (ID) | 5 A |
|---|---|
| Maximum Gate‑to‑Drain Voltage (VGD) | -15 V |
| Maximum Gate‑to‑Source Voltage (VGS) | 215 V |
| Power Added Efficiency (PAE) | 45 % (typ) |
| Linear Power Gain (GLP) | 11.0 dB (typ) |
The recommended bias is VDS = 10 V, IDS = 1.3 A, and gate resistance of 100 Ω.