The MGF4953A is a super-low noise InGaAs HEMT designed for use in C to K band amplifiers. It features a low noise figure and high associated gain.
The MGF4953A is a super‑low noise InGaAs HEMT designed for C to K band low‑noise amplifiers. It comes in a lead‑less ceramic package to minimise parasitic losses and is RoHS compliant.
The document provides detailed electrical characteristics, absolute maximum ratings, typical performance curves, S‑parameters and noise parameters, as well as recommended bias conditions and ordering information.
| Noise Figure (NFmin) typ. | 0.35 dB |
|---|---|
| Associated Gain (Gs) typ. | 13.5 dB |
| Gate‑to‑Drain Voltage (Vgdo) max | 3 V |
| Gate‑to‑Source Voltage (Vgso) max | 3 V |
| Drain Current (Id) max | 60 mA |
| Total Power Dissipation (Pt) max | 50 mW |
| Storage Temperature (Tstg) | -55 to +125 °C |
| Recommended Bias VDS | 2 V |
| Recommended Bias ID | 10 mA |
The recommended bias is VDS = 2 V and ID = 10 mA.
Yes, the MGF4953A is RoHS compliant, indicated by the letter “G” after the lot marking.
The maximum gate‑to‑drain voltage is 3 V.
It is intended for C to K band low‑noise amplifiers.