The MGF4935AM is a super-low noise InGaAs HEMT designed for use in S to Ku band amplifiers. It offers low noise figure and high associated gain.
The MGF4935AM is a 4‑pin flat‑lead GaAs HEMT designed for low‑noise amplifiers operating from S to Ku band. It offers a typical noise figure of 0.45 dB and an associated gain of 12 dB at 12 GHz, making it suitable for high‑performance RF front‑ends.
The datasheet provides absolute maximum ratings, recommended bias conditions, S‑parameter data, and RoHS compliance information. Safety and legal notices from Mitsubishi Electric conclude the document.
| Typical Noise Figure (NFmin) | 0.45 dB |
|---|---|
| Typical Associated Gain (Gs) | 12.0 dB |
| Gate‑to‑Drain Voltage (VGD0) | -3 V |
| Gate‑to‑Source Voltage (VGS0) | -3 V |
| Total Power Dissipation (PT) | 50 mW |
| Storage Temperature Range | -55 °C to +125 °C |
| Recommended Bias Conditions | VDS = 2 V, ID = 10 mA |
| RoHS Compliance | Yes |
The recommended bias is VDS = 2 V and ID = 10 mA.
Yes, the device is RoHS compliant, indicated by the letter “G” after the lot marking.
The maximum gate‑to‑drain voltage is –3 V.
The typical noise figure (NFmin) at 12 GHz is 0.45 dB.