The MGF0920A GaAs FET is a high-power, high-gain, high-efficiency N-channel Schottky Gate FET, suitable for UHF band power amplifiers.
The MGF0920A is a high‑power GaAs FET designed for L & S‑band (1.6 W) applications such as UHF band power amplifiers. It features a typical output power of 32 dBm at 1.9 GHz, 18 dB gain, and 45 % power‑added efficiency, all packaged in a hermetic SMD case.
Key specifications include a drain current rating of 1500 mA, gate‑to‑source breakdown voltage of –15 V, total power dissipation of 8.3 W, and an operating temperature range from –65 °C to +175 °C. Recommended bias conditions are VDS = 10 V, IDS = 400 mA with a gate resistor of about 200 Ω. The datasheet provides detailed S‑parameter curves up to 12.2 GHz.
| Typical Output Power | 32 dBm @ 1.9 GHz, Pin = 15 dBm |
|---|---|
| Typical Gain | 18 dB @ 1.9 GHz |
| Power‑Added Efficiency | 45 % @ 1.9 GHz, Pin = 15 dBm |
| Maximum Drain Current (ID) | 1500 mA |
| Gate‑to‑Source Breakdown Voltage (VGS0) | -15 V |
| Total Power Dissipation (PT) | 8.3 W |
| Storage Temperature Range | -65 °C to +175 °C |
The typical output power is 32 dBm when driven with a 15 dBm input at 1.9 GHz.
Recommended bias is VDS = 10 V, IDS = 400 mA with a gate resistor of about 200 Ω.
The device can handle a maximum drain current of 1500 mA.
It can be stored from –65 °C up to +175 °C.