MGF4941AL is a Mitsubishi product of GaAs HEMT low noise transistor, mainly used in Ku band amplifiers. Its features are low noise figure (NFmin. = 0.35dB) and high gain (Gs = 13.5dB).
The MGF4941AL is a super‑low‑noise InGaAs HEMT designed for Ku‑band amplifiers. It is supplied in a Micro‑X plastic package and features a typical noise figure of 0.35 dB at 12 GHz with an associated gain of 13.5 dB.
The datasheet provides absolute maximum ratings, recommended bias conditions, S‑parameter and noise‑parameter measurements, as well as ordering and RoHS compliance information.
| Typical Noise Figure (NFmin) | 0.35 dB |
|---|---|
| Typical Associated Gain (Gs) | 13.5 dB |
| Gate‑to‑Drain Voltage (VGDO) | -3 V |
| Gate‑to‑Source Voltage (VGSO) | -3 V |
| Total Power Dissipation (PT) | 50 mW |
| Storage Temperature Range (Tstg) | -55 °C to +125 °C |
| Recommended Bias Voltage (Vps) | 2 V |
| Recommended Bias Current (Ip) | 10 mA |
| RoHS Compliance | Yes (letter “G” after lot marking) |
The recommended bias is Vps = 2 V with a drain current of 10 mA.
Yes, the device is RoHS compliant; compliance is indicated by the letter “G” after the lot marking.
The typical noise figure at 12 GHz is 0.35 dB.
The typical associated gain at 12 GHz is 13.5 dB.