The MGF4953B is a super-low noise InGaAs HEMT (High Electron Mobility Transistor) designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
The MGF4953B super‑low noise InGaAs HEMT is offered in a lead‑less ceramic package to minimise parasitic losses. It targets C‑ to K‑band low‑noise amplifier applications and provides a typical noise figure of 0.55 dB at 20 GHz with an associated gain of 10.5 dB.
Key electrical ratings include a 3 V gate‑to‑drain voltage, 3 V gate‑to‑source voltage, 60 mA maximum drain current and 50 mW total power dissipation. The device is RoHS compliant (letter “G” after the lot marking) and is supplied on tape‑and‑reel (10 000 pcs/reel).
| Noise figure (NFmin) | 0.55 dB (Typ.) |
|---|---|
| Associated gain (Gs) | 10.5 dB (Typ.) |
| Gate‑to‑drain voltage (VGDO) | 3 V |
| Gate‑to‑source voltage (VGSO) | 3 V |
| Maximum drain current (ID) | 60 mA |
| Total power dissipation (PT) | 50 mW |
| Storage temperature range (Tstg) | -55 °C to +125 °C |
| Recommended bias | VDS = 2 V, ID = 10 mA |
Yes, the MGF4953B is a RoHS compliant product.
The recommended bias is VDS = 2 V and ID = 10 mA.
It uses a leadless ceramic package.
The maximum drain current is 60 mA.