The MGF0918A GaAs FET is a GaAs FET with an N-channel schottky Gate, designed for use UHF band amplifiers. It has high output power, high power gain and high power added efficiency.
The MGF0918A is a high‑power GaAs FET designed for use in L & S‑band (0.5 W) UHF power amplifiers. It features a hermetic package, high output power, high gain, and high power‑added efficiency.
Key specifications include a typical output power of 27 dBm at 1.9 GHz, a gain of 20 dB, and a power‑added efficiency of 45 % under the recommended bias of VDS = 10 V and ID = 150 mA. The document also lists absolute maximum ratings, electrical characteristics, and safety notices for circuit designers.
| Typical Output Power (Po) | 27 dBm @ 1.9 GHz, Pin = 8 dBm |
|---|---|
| Power Added Efficiency (nadd) | 45 % @ 1.9 GHz, Pin = 8 dBm |
| Gain (Gp) | 20 dB @ 1.9 GHz |
| Maximum Drain Current (ID) | 400 mA |
| Noise Figure (NF) | 1.0 dB (typ) |
| Package | Hermetic |
The typical output power is 27 dBm when operated at 1.9 GHz with an input of 8 dBm.
The device can handle up to 400 mA of drain current.