The MGF4961B is a super-low noise GaAs FET from Mitsubishi Electric that is designed for use in K band amplifiers. Its features are low noise figure (f=20GHz, NFmin. = 0.7dB, typical) and high gain (f=20GHz, Gs = 13.5dB, typical).
The MGF4961B is a super‑low‑noise InGaAs HEMT (high‑electron‑mobility transistor) intended for use in K‑band amplifier designs. It offers a typical minimum noise figure of 0.7 dB at 20 GHz and an associated gain of 13.5 dB, with recommended bias of 2 V gate‑source and 10 mA drain current.
The document also includes safety and handling guidelines, absolute maximum ratings, and ordering information. Mitsubishi Electric stresses that the data are for reference only and that users must evaluate the suitability of the device for their specific applications, especially in safety‑critical or high‑reliability systems.
| Minimum noise figure (NFmin) at 20 GHz | 0.7 dB (typ.) |
|---|---|
| Associated gain (Gs) at 20 GHz | 13.5 dB (typ.) |
| Total power dissipation (PT) | 50 mW |
The recommended bias is a gate‑source voltage of 2 V with a drain current of 10 mA.
The absolute maximum gate‑to‑source voltage is 4 V.
The device can be stored from –55 °C to +125 °C.