This document describes the MGF0907B high-power GaAs FET, which is used in UHF band power amplifiers. The product features high output power, high power gain, and high power added efficiency.
The MGF0907B is a high‑power GaAs field‑effect transistor with an N‑channel Schottky gate, intended for use in UHF band power amplifiers. It is supplied in a hermetically sealed metal‑ceramic package and is designed for Class A operation with typical output power of 40 dBm (10 W) at 2.3 GHz.
Key specifications include a linear power gain of 10 dB, power‑added efficiency of 37 % and maximum ratings such as -15 V gate‑to‑drain voltage, 215 V gate‑to‑source voltage, and 6 A drain current. The datasheet also provides recommended bias conditions (Vds = 10 V, Ids = 2.4 A, Rg = 50 Ω) and safety guidance for circuit designers.
| Linear power gain (GLP) | 10.0 dB @ 2.3 GHz |
|---|---|
| Gate‑to‑drain voltage (Vgd) | -15 V |
| Gate‑to‑source voltage (Vgs) | 215 V |
| Drain current (Id) | 6 A @ Gate |
| Total power dissipation (Pd) | 37.5 W |
| Storage temperature range | -65 °C to +175 °C |
Designers should keep safety first, use non‑flammable materials, provide auxiliary circuits, and follow the detailed safety notice in the datasheet.