MGF1451A is a GaAs MESFET power device produced by Mitsubishi Electric. It has high gain and high P1dB characteristics and is suitable for S to Ku band low noise amplifiers.
The MGF1451A power GaAs MES FET is offered in a Micro‑X ceramic package and is intended for use in S‑to‑Ku band low‑noise and power amplifiers. Key features include a typical linear gain of 10.5 dB and a 1 dB compression point of 13 dBm at 12 GHz.
The datasheet provides absolute maximum ratings, electrical characteristics, recommended bias conditions (VDS = 3 V, ID = 30 mA), S‑parameter data, and safety and RoHS compliance information. Mitsubishi Electric notes that the device is not intended for life‑critical applications without further evaluation.
| Gate to drain voltage (V_GDO) | 8 V |
|---|---|
| Gate to source voltage (V_GSO) | -8 V |
| Drain current (I_D) | 120 mA |
| Total power dissipation (P_T) | 300 mW |
| Channel temperature (T_oh) | 175 °C |
| Storage temperature (T_stg) | -55 °C to +125 °C |
| Linear power gain (Glp, typical) | 10.5 dB |
| 1 dB compression point (P1dB, typical) | 13 dBm |
| Thermal resistance (R_θ) | 420 °C/W |
The recommended bias is VDS = 3 V and ID = 30 mA.
Yes, the device is RoHS compliant, indicated by the letter “G” after the lot marking.
The absolute maximum drain current rating is 120 mA.
Typical linear gain (Glp) is 10.5 dB at 12 GHz.