MGF0953P L & S BAND / 0.6W SMD / Plastic Mold non - matched is MG brand's GaAs FET product, with high output power, high power gain and high power added efficiency, suitable for L/S band power amplifiers.
The MGF0953P is a high‑power GaAs FET designed for use in L‑band and S‑band power amplifiers. It features a small‑signal gain stage with a plastic‑mold, non‑matched SMD package.
Key specifications include a typical output power of 28 dBm at 2.15 GHz, a gain of 16.5 dB, and a power‑added efficiency of 40 % under specified bias. The document also lists absolute maximum ratings, recommended bias conditions, and S‑parameter data, along with safety and export‑control notices.
| Typical output power (Po) | 28.0 dBm @ 2.15 GHz, Pin=10 dBm |
|---|---|
| Typical gain (Gp) | 16.5 dB @ 2.15 GHz |
| Power‑added efficiency (nadd) | 40 % @ 2.15 GHz, Pin=10 dBm |
| Gate‑to‑source breakdown voltage (VGS0) | -15 V |
| Drain current (ID) | 0.4 A |
| Total power dissipation (PT) | 6.25 W |
| Storage temperature range | -40 °C to +150 °C |
The typical output power is 28 dBm when operated at 2.15 GHz with a 10 dBm input.
The maximum drain current rating is 0.4 A.
The device can be stored from –40 °C up to +150 °C.