The MGF1951A is a lead‑less ceramic GaAs power MES FET designed for S‑ to Ku‑band power amplifiers. It offers high gain and high P1dB performance, with a typical gain of 9.0 dB at 12 GHz.
The sheet provides absolute maximum ratings, recommended bias conditions, electrical characteristics, typical curves and S‑parameter data, as well as safety and RoHS compliance information for designers.
| Gate‑to‑drain voltage (VGDO) | -8 V |
|---|---|
| Gate‑to‑source voltage (VGSO) | -8 V |
| Drain current (ID) | 120 mA |
| Total power dissipation (PT) | 300 mW |
| Channel temperature (T_oh) | 125 °C |
| Storage temperature (T_stg) | -65 °C to +125 °C |
| Typical gain (Glp) at 12 GHz | 9.0 dB |
| Typical 1‑dB compression point (P1dB) at 12 GHz | 13 dBm |
| Recommended bias conditions | VDS=3 V, ID=30 mA |
| RoHS compliance | Yes |
The recommended bias is VDS = 3 V and ID = 30 mA.
Yes, the MGF1951A is RoHS compliant.
The maximum gate‑to‑drain voltage is –8 V.
Typical gain is 9.0 dB at 12 GHz.