MGFC39V7785A 7.7 – 8.5 GHz BAND / 8W is a GaAs power FET from Toshiba. It features high output power, high power gain and high power added efficiency, and is suitable for 7.7 - 8.5 GHz band power amplifiers and digital radio communications.
The MGFC39V7785A is an internally impedance‑matched GaAs power FET designed for 7.7‑8.5 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Key features include Class A operation, 50 Ω internal matching, up to 8 W output power at 1 dB compression, 7.5 dB typical gain, 27 % typical power‑added efficiency, and low distortion (IM3 ≈ ‑45 dBc). The document also provides recommended bias conditions, electrical ratings, and safety guidelines for circuit designers.
| Frequency band | 7.7‑8.5 GHz |
|---|---|
| Typical output power (P1dB) | 8 W |
| Typical linear power gain (GLP) | 7.5 dB |
| Power‑added efficiency (PAE) | 27 % |
| Third‑order IM distortion (IM3) | -45 dBc |
| Maximum drain current (ID) | 7.5 A |
| Gate‑to‑drain breakdown voltage (V_GDO) | 15 V |
| Gate‑to‑source breakdown voltage (V_GSO) | 15 V |
| Total power dissipation (PT) | 42.8 W |
| Storage temperature range | -65 °C to +175 °C |
The typical output power at 1 dB compression is 8 W when operated in the 7.7‑8.5 GHz band.
The device can handle a maximum drain current of 7.5 A.