MGFC39V6472A is an internally matched high-power GaAs FET designed for use in 6.4-7.2 GHz band amplifiers. It features high output power, high power gain, high power added efficiency, and low distortion.
The MGFC39V6472A is an internally impedance‑matched GaAs power FET designed for 6.4 — 7.2 GHz band amplifiers. It offers class‑A operation, high output power, high gain, and high power‑added efficiency in a hermetically sealed metal‑ceramic package.
The document includes safety guidance, recommended bias settings (VDS = 10 V, ID = 2.4 A), electrical characteristics, and mechanical outline dimensions. It also contains legal and export‑control notices from Mitsubishi Electric Corporation.
| Frequency band | 6.4 — 7.2 GHz |
|---|---|
| Typical output power (P1dB) | 8 W |
| Typical linear gain (GLP) | 9.0 dB |
| Typical power‑added efficiency (PAE) | 28 % |
| Maximum drain current (ID) | 7.5 A |
| Gate‑to‑drain breakdown voltage (VGDO) | -15 V |
| Gate‑to‑source breakdown voltage (VGSO) | -15 V |
| Total power dissipation (PT) | 42.8 W |
The typical P1dB is 8 W for the MGFC39V6472A.
The recommended bias is VDS = 10 V and ID = 2.4 A.
It operates in the 6.4 — 7.2 GHz band.
Keep safety first, use non‑flammable materials, provide auxiliary circuits, and prevent malfunction or mishap in circuit designs.