MGFC39V4450A 4.4 – 5.0 GHz BAND / 8W is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers
The MGFC39V4450A is an internally impedance‑matched GaAs power FET designed for 4.4‑5.0 GHz band amplifiers. The hermetically sealed metal‑ceramic package provides high reliability and the device operates in Class A with typical 8 W output at 1 dB compression.
The sheet lists recommended bias (VDS = 10 V, ID = 2.4 A), electrical characteristics such as 7.5 A drain current, 15 V breakdown voltages, and a total power dissipation of 42.8 W. Safety and export‑control notices are also included.
| Frequency band | 4.4‑5.0 GHz |
|---|---|
| Typical output power (P1dB) | 8 W |
| Typical linear power gain (GLP) | 11.5 dB |
| Power added efficiency (PAE) | 30 % |
| Maximum drain current (ID) | 7.5 A |
| Gate‑to‑drain breakdown voltage (VGD0) | -15 V |
| Gate‑to‑source breakdown voltage (VGS0) | -15 V |
| Total power dissipation | 42.8 W |
| Storage temperature range | -65 °C to +175 °C |
The typical P1dB is 8 W.
Recommended bias is VDS = 10 V and ID = 2.4 A.
The typical linear power gain is 11.5 dB.