MGFC36V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8-6.75GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC36V5867 is a C‑band internally matched GaAs power FET designed for use in 5.8‑6.75 GHz amplifiers. It is housed in a hermetically sealed metal‑ceramic BAO 0.8 package for high reliability.
Key electrical characteristics include a typical output power of 4 W, linear power gain of 10 dB, a maximum drain current of 3.75 A, and operation over a temperature range of –65 °C to +175 °C. Recommended bias conditions are VDS = 10 V, ID = 1.2 A, and RG = 100 Ω. Safety and legal notices emphasize proper circuit design and compliance with export regulations.
| Frequency band | 5.8 – 6.75 GHz |
|---|---|
| Typical output power | 4 W |
| Linear power gain (GLP) | 10 dB (typ.) |
| Maximum drain current (ID) | 3.75 A |
| Gate‑to‑drain breakdown voltage (V_GDO) | 15 V |
| Gate‑to‑source breakdown voltage (V_GSO) | 15 V |
| Storage temperature range | -65 °C to +175 °C |
| Power added efficiency (PAE) | 30 % |
| Thermal resistance (Rth) | 5‑6 °C/W |
The device delivers a typical output power of 4 W in the 5.8‑6.75 GHz band.
The absolute maximum drain current is 3.75 A.
The device can be stored from –65 °C up to +175 °C.