The MGFC38V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers.
The MGFC38V5867 is an internally impedance‑matched GaAs power FET designed for use in 5.8‑6.75 GHz band amplifiers. The hermetically sealed metal‑ceramic package offers high reliability and typical output power of 6 W.
The document includes safety recommendations, recommended bias conditions, absolute maximum ratings, and detailed electrical characteristics such as gain, drain current, and thermal resistance.
| Frequency band | 5.8 – 6.75 GHz |
|---|---|
| Typical output power | 6 W |
| Linear Power Gain (GLP) | 10 dB (typ) |
| Maximum drain current (ID) | 5 A |
| Gate‑to‑drain breakdown voltage (VGDO) | 15 V |
| Gate‑to‑source breakdown voltage (VGSO) | 15 V |
| Power added efficiency (PAE) | 32 % |
| Thermal resistance | 5 °C/W |
| Storage temperature range | -65 °C to +175 °C |
The recommended bias is VDS = 10 V, ID = 1.8 A, and RG = 100 Ω.
Users should keep safety first, place auxiliary circuits appropriately, use non‑flammable materials, and follow the safety notice in the document.
The typical linear power gain is 10 dB over the 5.8‑6.75 GHz band.
The maximum drain current rating is 5 A.