The MGFC39V5258 is an internally impedance-matched GaAs power FET designed for use in 5.2-5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC39V5258 is a C‑band internally impedance‑matched GaAs power FET designed for use in 5.2‑5.8 GHz band power amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and is intended for Class A operation.
Key electrical characteristics include a typical output power of 8 W, linear power gain of 9 dB, and power‑added efficiency of 30 %. Recommended bias is VDS = 10 V with ID = 2.4 A. The device can operate from –65 °C to +175 °C and has a maximum drain current of 5.6 A.
| Frequency band | 5.2 — 5.8 GHz |
|---|---|
| Power added efficiency (PAE) | 30 % |
| Linear power gain (GLP) | 9.0 dB |
| Maximum drain current | 5.6 A |
| Gate‑to‑drain breakdown voltage | 15 V |
| Gate‑to‑source breakdown voltage | 45 V |
| Total power dissipation | 42.8 W |
| Thermal resistance (RθJC) | 3.5 °C/W |
| Storage temperature range | -65 °C to +175 °C |
| Recommended bias (VDS/ID) | 10 V / 2.4 A |
Use a drain‑source voltage of 10 V and a drain current of 2.4 A.
The device can handle up to 5.6 A of drain current.
It is rated for storage temperatures from –65 °C to +175 °C.