The MGFC36V3742A is an internally impedance-matched GaAs power FET especially designed for use in 3.7-4.2GHz band amplifiers. Product features include: internally matched to 50ohm system, high output power, high power gain, high power added efficiency and low distortion.
The MGFC36V3742A is a C‑band internally impedance‑matched GaAs power FET designed for use in 3.7‑4.2 GHz band amplifiers. It features Class A operation, 50 Ω matching, high output power (4 W typical), high gain (12.5 dB typical) and a power‑added efficiency of about 33 %.
Typical applications include 3.7‑4.2 GHz band power amplifiers and digital radio communication systems. The device is supplied in a hermetically sealed metal‑ceramic package for high reliability, and Mitsubishi Electric provides safety and bias‑condition recommendations for circuit designers.
| Frequency band | 3.7‑4.2 GHz |
|---|---|
| Typical output power (P1dB) | 4 W |
| Typical linear gain (GLP) | 12.5 dB |
| Power added efficiency (PAE) | 33 % |
| Drain current (ID) | 3.75 A |
| Reverse gate current (IGR) | -10 mA |
| Forward gate current (IGF) | 21 mA |
| Total power dissipation (PT) | 25 W |
| Storage temperature range | -65 °C to +175 °C |
| Gate‑to‑drain breakdown voltage (VGDO) | 15 V |
The device delivers a typical output power of 4 W at 1 dB gain compression in the 3.7‑4.2 GHz band.
Mitsubishi recommends a drain‑source voltage of 10 V, a drain current of 1.2 A, and a gate resistor of 1 kΩ.
The typical PAE is 33 % under the specified test conditions.
It is intended for 3.7‑4.2 GHz band power amplifiers and digital radio communication systems.