The MGFC39V3742A is an internally matched GaAs power FET designed for use in 3.7-4.2GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC39V3742A is an internally impedance‑matched GaAs power FET designed for 3.7‑4.2 GHz band amplifiers. It offers class‑A operation, high output power, high gain and high power‑added efficiency in a hermetically sealed metal‑ceramic package.
Mitsubishi Electric emphasizes safety in circuit design, recommending non‑flammable materials, auxiliary protection circuits and careful layout to avoid injury, fire or equipment damage. The document also includes bias recommendations and export‑control notices.
| Frequency band | 3.7‑4.2 GHz |
|---|---|
| Typical output power (P1dB) | 8 W |
| Typical linear gain (GLP) | 12 dB |
| Power‑added efficiency (PAE) | 31 % |
| Maximum drain current (ID) | 7.5 A |
| Gate‑to‑drain breakdown voltage (V_GDO) | 15 V |
| Gate‑to‑source breakdown voltage (V_GSO) | 15 V |
| Total power dissipation (P_T) | 42.8 W |
| Storage temperature range | -65 °C to +175 °C |
| Recommended bias V_DS | 10 V |
| Recommended bias R_G | 500 Ω |
The typical P1dB is 8 W for the 3.7‑4.2 GHz band.
Recommended bias is V_DS = 10 V, I_D = 2.4 A, and R_G = 500 Ω.
The maximum drain current rating is 7.5 A.