The MGFC38V6472 is an internally impedance-matched GaAs power FET especially designed for use in 6.4-7.2 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC38V6472 is an internally impedance‑matched GaAs power FET designed for C‑band (6.4‑7.2 GHz) amplifiers. It operates in Class A, provides high output power, high gain and good power‑added efficiency, and is supplied in a hermetically sealed metal‑ceramic package for reliability.
Typical specifications include a 6 W output power, 9 dB linear gain, 31 % PAE, 5 A drain current, and a total power dissipation of 30 W. Recommended bias conditions are VDS = 10 V, ID = 1.8 A with a 1 kΩ gate resistor. The device is rated for operation from –65 °C to +175 °C and includes safety notices for circuit designers.
| Frequency band | 6.4 – 7.2 GHz |
|---|---|
| Typical output power | 6 W |
| Linear power gain (GLP) | 9 dB (typ.) |
| Power‑added efficiency (PAE) | 31 % (typ.) |
| Drain current (ID) | 5 A |
| Gate‑to‑drain breakdown voltage (V_GDO) | ‑15 V |
| Total power dissipation | 30 W |
| Operating temperature range | -65 °C to +175 °C |
The MGFC38V6472 provides a typical output power of 6 W across the 6.4‑7.2 GHz band.
Recommended bias is VDS = 10 V, ID = 1.8 A with a 1 kΩ gate resistor.
The maximum drain current rating is 5 A.
The device is rated for storage temperatures from –65 °C to +175 °C.