The MGFC36V7785A is an internally matched GaAs power FET designed for use in 7.7-8.5 GHz band amplifiers. It features Class A operation, internal matching to a 50-ohm system, high output power, high power gain, high power added efficiency, and low distortion.
The MGFC36V7785A is an internally impedance‑matched GaAs power FET designed for 7.7‑8.5 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and offers Class A operation with high output power and efficiency.
The document provides detailed electrical characteristics, recommended bias conditions, absolute maximum ratings, and safety guidelines. It also includes an outline drawing and legal disclaimer for Mitsubishi Semiconductor products.
| Frequency band | 7.7‑8.5 GHz |
|---|---|
| Linear Power Gain (GLP) | 7‑8 dB |
| Power Added Efficiency (PAE) | 29 % (typ.) |
| Maximum drain current (ID) | 3.75 A |
| Gate‑to‑drain breakdown voltage (VGD0) | -15 V |
| Gate‑to‑source breakdown voltage (VGS0) | -15 V |
| Total power dissipation (PT) | 25 W |
| Storage temperature range | -65 °C to +175 °C |
The recommended bias is VDS = 10 V and ID = 1.2 A.
The typical PAE is 29 % at 7.7‑8.5 GHz.
The maximum drain current is 3.75 A.