The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC39V5864 is an internally impedance‑matched GaAs power FET designed for 5.8‑6.75 GHz band amplifiers. It offers typical output power of 8 W, a linear gain of about 9 dB, and a maximum drain current of 75 A.
Mitsubishi emphasizes safety, advising designers to place auxiliary circuits, use non‑flammable materials, and follow recommended bias conditions (VDS = 10 V, ID = 2.4 A, RG = 50 Ω). The document also contains legal notices and export‑control information.
| Frequency band | 5.8 – 6.75 GHz |
|---|---|
| Typical output power | 8 W |
| Linear Power Gain (GLP) | 9 dB (typ.) |
| Maximum drain current (ID) | 75 A |
| Gate‑to‑drain breakdown voltage (VGD) | 15 V |
| Power added efficiency (PAE) | 30 % |
| Thermal resistance (Rth) | 3.5 °C/W |
The device delivers a typical output power of 8 W across the 5.8‑6.75 GHz band.
Recommended bias is VDS = 10 V, ID = 2.4 A, and a source resistance of 50 Ω.
The absolute maximum drain current rating is 75 A.
Mitsubishi advises keeping safety first, using auxiliary circuits, non‑flammable materials, and following the recommended bias conditions.