MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1-7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC36V7177A is a C‑band internally impedance‑matched GaAs power FET designed for use in 7.1‑7.7 GHz band amplifiers. Its hermetically sealed metal‑ceramic package provides high reliability for applications such as power amplifiers and digital radio communication.
Key specifications include 4 W typical output power, 9 dB typical linear gain, 30 % typical power‑added efficiency, and low distortion (IM3 ≈ ‑45 dBc). Recommended bias is VDS = 10 V, ID = 1.2 A with a 1 kΩ gate resistor. Safety and export‑control notices are also provided.
| Frequency band | 7.1‑7.7 GHz |
|---|---|
| Typical output power (P1dB) | 4 W |
| Linear Power Gain (GLP) | 9 dB (typical) |
| Power Added Efficiency (PAE) | 30 % (typical) |
| Third‑order intermodulation (IM3) | -45 dBc (typical) |
| Drain current (ID) | 1.8 A (typical) |
| Gate‑to‑drain breakdown voltage (VGD0) | -15 V |
| Thermal resistance (Rth) | 5‑6 °C/W |
It operates in the 7.1‑7.7 GHz band.
The typical output power is 4 W at 7.1‑7.7 GHz.
The typical PAE is about 30 %.
Recommended bias is VDS = 10 V, ID = 1.2 A with a 1 kΩ gate resistor.