The MGFC39V7177A is an internally impedance-matched GaAs power FET designed for use in 7.1-7.7 GHz band amplifiers. It features class A operation, internal matching to a 50-ohm system, high output power P1dB=8W (typical) at 7.1-7.7 GHz, high power gain GLP=8.0dB (typical) at 7.1-7.7 GHz, high power added efficiency P.A.E.=28% (typical) at 7.1-7.7 GHz, and low distortion. It is suitable for power amplifiers and digital radio communication in the 7.1-7.7 GHz band.
The MGFC39V7177A is an internally impedance‑matched GaAs power FET designed for 7.1‑7.7 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Key features include Class A operation, 8 W typical output at 1 dB compression, 8 dB typical linear power gain, and 28 % typical power‑added efficiency. Recommended bias is VDS = 10 V and ID = 2.4 A, with maximum drain current of 7.5 A. Safety considerations are emphasized for circuit design.
| Frequency band | 7.1‑7.7 GHz |
|---|---|
| Typical output power (P1dB) | 8 W |
| Linear power gain (GLP) | 8.0 dB |
| Power‑added efficiency (PAE) | 28 % |
| Third‑order intermodulation (IM3) | -45 dBc |
| Gate‑to‑drain breakdown voltage (V_GD) | -15 V |
| Gate‑to‑source breakdown voltage (V_GS) | -15 V |
| Maximum drain current (I_D) | 7.5 A |
| Total power dissipation | 42.8 W |
| Storage temperature range | -65 °C to +175 °C |
The typical output power at 1 dB compression is 8 W.
Recommended bias is VDS = 10 V and ID = 2.4 A.
The maximum drain current rating is 7.5 A.
Yes, users should keep safety first in circuit designs and follow recommended safety measures.