The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4 GHz band amplifiers. It features class AB operation, high output power, high power gain and high power added efficiency. It is suitable for use in satellite earth-station communication transmitter and VSAT.
The MGFC47V5864 is an internally impedance‑matched GaAs power FET designed for 5.8‑6.4 GHz band amplifiers, typically used in solid‑state power amplifiers for satellite earth‑station communication transmitters and VSAT systems. It features Class‑AB operation, 50 W typical output power, 9.5 dB linear gain and 35 % power‑added efficiency.
Recommended bias is VDS = 10 V, ID = 9.8 A with a 100 Ω gate resistor. The device is rated for storage temperatures from –65 °C to +175 °C and includes safety notices and legal disclaimer statements from Mitsubishi Electric Corporation.
| Frequency band | 5.8 — 6.4 GHz |
|---|---|
| Typical output power | 50 W (typ) |
| Linear power gain (GLP) | 9.5 dB (typ) |
| Power added efficiency (PAE) | 35 % (typ) |
| Recommended drain‑source voltage (VDS) | 10 V |
| Storage temperature range | -65 °C to +175 °C |
The device delivers a typical output power of 50 W in the 5.8‑6.4 GHz band.
Recommended bias is VDS = 10 V, ID = 9.8 A, and a gate resistor of 100 Ω.
The typical power‑added efficiency is 35 % at 5.8‑6.4 GHz.
It can be stored from –65 °C up to +175 °C.